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Foreign-Trade Zone (FTZ) 75, Notification of Proposed Production Activity; Intel Corporation; (Semiconductor Products); Chandler, Arizona

Department of Commerce Foreign-Trade Zones Board [B-89-2026] Intel Corporation submitted a notification of proposed production activity to the FTZ Board (the Board) for its faci...

Department of Commerce
Foreign-Trade Zones Board
  1. [B-89-2026]

Intel Corporation submitted a notification of proposed production activity to the FTZ Board (the Board) for its facilities in Chandler, Arizona within Subzone 75C. The notification conforming to the requirements of the Board's regulations (15 CFR 400.22) was received on July 16, 2026.

Pursuant to 15 CFR 400.14(b), FTZ production activity would be limited to the specific foreign-status material(s)/component(s) and specific finished product(s) described in the submitted notification (summarized below) and subsequently authorized by the Board. The benefits that may stem from conducting production activity under FTZ procedures are explained in the background section of the Board's website—accessible via www.trade.gov/​ftz. The proposed finished product(s) and material(s)/component(s) would be added to the production authority that the Board previously approved for the operation, as reflected on the Board's website.

The proposed finished products include: High Precision Quartz Photomasks; Semiconductor transducers; Printed Circuits; and Electronic integrated circuits (duty free).

The proposed foreign-status materials/components include: Corundum; Methane (liquid); Methane (gas); Chlorine; Argon; Oxygen; ( printed page 46768) Hydrogen; Helium; Xenon; Nitrogen; Hydrogen Chloride; Sulfuric Acid; Nitric Acid; Phosphoric Acid; Hydrofluoric Acid; Silicate reagent; Hydrogen Bromide; Carbon dioxide; Silica; Carbon Monoxide; Nitrous Oxide; Nitric Oxide; Sulfur dioxide; Boron trichloride; Dichlorosilane; Silane; Silicon tetrachloride; Chlorine trifluoride; Diiodosilane; Nitrogen trifluoride; Anhydrous ammonia; Potassium Hydroxide in solid form; Sulfur hexafluoride gas; Tungsten hexafluoride; Titanium tetrachloride; Carbonyl sulfide; Copper sulphate solution; Potassium chloride electrode filling solution; Cerium hydroxide; Hydrogen peroxide; Disilane; Phosphine of copper; Octane; Ethyne aka Acetylene; Trifluoromethane; Halocarbon; Difluoromethane; Fluoromethane; Octafluorocyclobutane; Isopropyl alcohol; Tert-butyl alcohol; Hexachlorodisilane; 2-Heptanone; Cyclohexanone; Cyclopentanone; Sodium acetate; Butyl acetate; Propylene glycol monomethyl ether acetate; 2-(Methylamino)ethanol; Tetramethylammonium hydroxide; Tetraethylsilanediamine; Di-iso-propylaminosilane; Tetramethylsilane; Trimethylaluminum; Trimethylsilane; Butyrolactone; Potassium chloride; Butoxyethanol; Ethanolamine; Lubrication containing 50% or more by weight of petroleum oils; Ammonium; Cerium dioxide; Tetraethylammonium hydroxide; Welding powder; Triethanolamine based solution; Dimethyl sulfoxide; Wafers polycrystalline silicon; Cobalt based solution; Diborane gas; Ethylene glycol based solution; Ion exchanger resin; Ammonium fluoride; Glass Rods; Permanent metal magnets; Central Processing Unit; Memory—Dynamic Random-Access Memory; Cobalt sputtering target; Copper sputtering target; Deuterium; Hydrocarbon deposition solution; Tantalum powder; Tetrakis (methylethylamino) zirconium; 2-Propanol, 1-methoxy, 2-aceetate based undercoat material; Polyglycerol polymer based slurry; Surfactant solution; Hydroxyethanediphsphonic acid based wafer cleaning solution; Acetic acid based slurry; Amorphous silica based slurry; Silica and phosphoric acid based slurry; 4-Morpholinecarbaldehyde based solution; Nitrogen trifluoride; Benzotriazole based cleaning solution; Helium and nitrogen mixture; Helium based compressed gas mixture; Hydrogen and argon mixture; Isobutyl propionate-based developer solution; Methane and argon mixture; and Oxygen and helium mixture (duty rate ranges from duty-free to 6.5%).

The request indicates that certain materials/components are subject to duties under section 122 of the Trade Act of 1974 (Section 122), section 232 of the Trade Expansion Act of 1962 (section 232), or section 301 of the Trade Act of 1974 (section 301), depending on the country of origin. The applicable section 122, section 232, and section 301 decisions require subject merchandise to be admitted to FTZs in privileged foreign status (19 CFR 146.41).

Public comment is invited from interested parties. Submissions shall be addressed to the Board's Executive Secretary and sent to: . The closing period for their receipt is September 2, 2026.

A copy of the notification will be available for public inspection in the “Online FTZ Information System” section of the Board's website.

For further information, contact John Frye at .

Dated: July 22, 2026.

Elizabeth Whiteman,

Executive Secretary.

[FR Doc. 2026-15035 Filed 7-23-26; 8:45 am]

BILLING CODE 3510-DS-P

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91 FR 46767

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“Foreign-Trade Zone (FTZ) 75, Notification of Proposed Production Activity; Intel Corporation; (Semiconductor Products); Chandler, Arizona,” thefederalregister.org (July 24, 2026), https://thefederalregister.org/documents/2026-15035/foreign-trade-zone-ftz-75-notification-of-proposed-production-activity-intel-corporation-semiconductor-products-chandler.