Foreign-Trade Zone (FTZ) 18, Notification of Proposed Production Activity; Western Digital Technologies, Inc.; (Semiconductor Die); San Jose and Fremont California

Western Digital Technologies, Inc. submitted a notification of proposed production activity to the FTZ Board (the Board) for its facilities in San Jose and Fremont, California within Subzone 18V. The notification conforming to the requirements of the Board's regulations (15 CFR 400.22) was received on July 29, 2026.

Pursuant to 15 CFR 400.14(b), FTZ production activity would be limited to the specific foreign-status material(s)/component(s) and specific finished product(s) described in the submitted notification (summarized below) and subsequently authorized by the Board. The benefits that may stem from conducting production activity under FTZ procedures are explained in the background section of the Board's website—accessible via www.trade.gov/​ftz.

The proposed finished product is Die for Hard Disk Drive Head (duty-free).

The proposed foreign-status materials/components include: Single or multiple metal alloy sputtering targets containing at least one of the following metals: Ru, Al, Cr, Co, Ir, B, Fe, Ni, Hf, Ti, Pt, Ag, Mg, Ta, Ge, Mn, Mo, Zr, W, Y, Pd, Nb, Au, Rh, Sm; Undercoated .55-1.55um Alumina Substrates; EMD Performance Materials Corp AZ 10XT (100CP) Photoresist; EMD Performance Materials Corp AZ 10XT (50cP) Photoresist; EMD Performance Materials Corp AZ 10XT Photoresist (520cP) Photoresist; EMD Performance Materials Corp AZ 1529 Photoresist; EMD Performance Materials Corp AZ 50XT Photoresist; EMD Performance Materials Corp AZ 9220 Photoresist (50CPS) Photoresist; EMD Performance Materials Corp AZ 9260 PHOTORESIST (520 CPS) Photoresist; EMD Performance Materials Corp AZ 7905 MIF Photoresist; EMD Performance Materials Corp AZ nLOF 2035 Photoresist; EMD Performance Materials Corp AZ P4110 Photoresist; EMD Performance Materials Corp AZ P4330-RS Photoresist; Dupont AR 602-510 Photoresist; JSR Micro, Inc. JSR ARF AR1891JN-30 Photoresist; JSR Micro, Inc. JSR ARF ARX3001JN-15 Photoresist; JSR Micro Inc. JSR ARF ARX3001JN-9Photoresist; JSR Micro, Inc. JSR NFC900 Photoresist; Fujifilm Electronic Materials LLCGKR-4602PP Photoresist; Rohm and Haas Electronic Materials LLC Microposit LOL 1000 Lift Off Layer Adhesion Promoting (PR1); Rohm and Haas Electronic Materials LLC Microposit LOL 1100 Lift Off Layer Adhesion Promoting (PR1); Rohm and Haas Electronic Materials LLC Microposit LOL 2000 Lift Off Layer Adhesion Promoting (PR1); Dow Megaposit SPR 955CM-1.4Photoresist; Kayaku Advanced Materials PMGI XS2Adhesion Promoting (PR1); Shin-Etsu Chemical Co., Ltd. SAIL X311 Photoresist; Shin-Etsu Chemical Co., Ltd.SEPR-I032-3.5 Photoresist; Shin-Etsu Chemical Co., Inc.SEPR-I036-4.0 Photoresist; Shin-Etsu Chemical Co., Ltd.SEPR-I036N-0.8Photoresist; Shin-Etsu Chemical Co., Ltd.SEPR-I036N-4.0 Photoresist; Shin-Etsu Chemical Co., Ltd.SEPR-I036NE-4.0 Photoresist; Shin-Etsu Chemical Co., Ltd.SEPR-I051-1.5 Photoresist; Shin-Etsu Chemical Co., Ltd.SEPR-I051N-1.5 Photoresist; Shin-Etsu MicroSi, Inc. SEPR-I032N-1.5 Photoresist; Shin-Etsu Chemical Co., Ltd.SIHM-A940-38 Photoresist; Shin-Etsu Chemical Co., Ltd.SEPR-I302N-1.5 Photoresist; Shin-Etsu Chemical Co., Ltd.SIHM-A943-0.1 Photoresist; Shin-Etsu Chemical Co., Ltd. SIPR 9272M-6.0 Photoresist; Shin-Etsu Chemical Co., Ltd. SIPR 9272N-6.0 (N-Version) Photoresist; Shin-Etsu Chemical Co., Inc. SIPR 9361L2M-2.0 Photoresist; Shin-Etsu Chemical Co., Ltd. SIPR 9361M-2.5 Photoresist; Shin-Etsu Chemical Co., Inc. SIPR 9684HM-2.5 Photoresist; Shin-Etsu Chemical Co., Inc. SIPR 9740M-1.0 Photoresist; Shin-Etsu Chemical Co., Inc. SIPR 9770M-3.0 Photoresist; Shin-Etsu Chemical Co., Ltd. SIPR-9361L2N-2.0 Photoresist; Shin-Etsu Chemical Co., Ltd. SIPR-9361N-2.5 Photoresist; Shin-Etsu Chemical Co., Ltd. SIPR-9684HN-2.5 Photoresist; Shin-Etsu Chemical Co., Ltd. SIPR-9740N-1.0 Photoresist; Shin-Etsu Chemical Co., Ltd. SIPR-9770N-3.0 Photoresist; Shin-Etsu Chemical Co., Inc. SIPR-PR-1Adhesion Promoting (PR1); Sumitomo Chemical Co., Ltd. SUMIRESIST® PFI-38 series Photoresist; Tokyo Ohka Kogyo Co., Ltd.TARF-P7052 EM Photoresist; Tokyo Ohka Kogyo Co., Ltd. pr Photoresist; Tokyo Ohka Kogyo Co., Ltd.TDUR-P5107 (5.6cP) Photoresist; Fujifilm Electronic Materials USA, Inc.TIS193IL-A01 Photoresist; Rohm and Haas Electronic Materials LLCUV210GS-0.3 Positive DUV Photoresist; Rohm and Haas Electronic Materials LLCUV210GS-0.4 Positive DUV Photoresist; Dupont AR 3 GSF-600 DUV Photoresist; Fujifilm Electronic Materials USA, Inc. Durimide 20-400APhotoresist; Fujifilm Electronic Materials USA, Inc. Durimide 20-500APhotoresist; Fujifilm Electronic Materials USA, Inc. Durimide 20-1200A Photoresist; and Shin-Etsu Chemical Co., Ltd MPHP (Microprime HP Primer) Organo-silicon Hexamethyldisilazane (duty rate ranges from duty-free to 5.3%).

The request indicates that certain materials/components are subject to duties under section 301 of the Trade Act of 1974 (section 301), depending on the country of origin. The applicable section 301 decision requires subject merchandise to be admitted to FTZs in privileged foreign status (19 CFR 146.41).

Public comment is invited from interested parties. Submissions shall be addressed to the Board's Executive Secretary and sent to: ftz@trade.gov. The closing period for their receipt is September 15, 2026. ( printed page 50753)

A copy of the notification will be available for public inspection in the “Online FTZ Information System” section of the Board's website.

For further information, contact John Frye at John.Frye@trade.gov.